1

Features

µµµµs/Byte typical

– 25 mA Active Current

–50

µµµµA CMOS Standby Current

Description

The AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of

8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the

devices offer access times to 120 ns with power dissipation of just 90 mW over the

commercial temperature range. When the devices are deselected, the CMOS standby

current is less than 50

To allow for simple in-system reprogrammability, the AT49BV512 does not require

high input voltages for programming. Three-volt-only commands determine the read

and programming operation of the device. Reading data out of the device is similar to

reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing

the entire 1 megabit of memory and then programming on a byte by byte basis. The

512K (64K x 8)

Single 2.7-volt

Flash Memory

AT49BV512

Rev. 1026C–09/98

Pin Configurations

Pin Name

Function

A0 - A15

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

PLCC Top View

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

A14

A13

A8

A9

A11

OE

A10

CE

I/O7

VSOP Top View (8 x 14 mm) or

TSOP Top View (8 x 20 mm)

Type 1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

A11

A9

A8

A13

A14

NC

WE

VCC

NC

NC

A15

A12

A7

A6

A5

A4

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

A0

A1

A2

A3

(continued)

DIP Top View

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

NC

NC

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

VCC

WE

NC

A14

A13

A8

A9

A11

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3