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AT49BV040T Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT49BV040T Datasheet(HTML) 1 Page - ATMEL Corporation |
1 / 12 page 1 4-Megabit (512K x 8) Single 2.7-volt Battery-Voltage™ Flash Memory AT49BV040 AT49BV040T AT49LV040 AT49LV040T AT49BV/LV040 Features • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - 30 µs/Byte Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 25 mA Active Current –50 µA CMOS Standby Current • Typical 10,000 Write Cycles • Small Packaging – 8 x 8 mm CBGA – 8 x 14 mm V-TSOP Description The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech- nology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA. The device contains a user-enabled “boot block” protection feature. Two versions of the feature are available: the AT49BV/LV040 locates the boot block at lowest order addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses (“top boot”). 0679AX-A–9/97 Pin Configurations Pin Name Function A0 - A18 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs CBGA Top View A B C D E F 1 234567 GND A17 A10 A14 A16 A15 I/O6 I/O7 NC A13 A11 A12 VCC I/O4 I/O5 A9 WE A8 VCC NC NC NC NC NC I/O2 NC I/O3 NC A7 A18 OE I/O0 I/O1 A6 A4 A5 GND CE A0 A3 A1 A2 PLCC Top View V - TSOP Top View (8 x 14 mm) or T - TSOP Top View (8 x 20 mm) (continued) |
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