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LPV521MGX Datasheet(PDF) 4 Page - Texas Instruments

Part # LPV521MGX
Description  LPV521 Nanopower, 1.8V, RRIO, CMOS Input, Operational Amplifier
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LPV521MGX Datasheet(HTML) 4 Page - Texas Instruments

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LPV521
SNOSB14C – AUGUST 2009 – REVISED FEBRUARY 2013
www.ti.com
1.8V AC Electrical Characteristics
(1)
Unless otherwise specified, all limits guaranteed for TA = 25°C, V
+ = 1.8V, V= 0V, V
CM = VO = V
+/2, and R
L > 1 MΩ.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
(2)
(3)
(2)
GBW
Gain-Bandwidth Product
CL = 20 pF, RL = 100 kΩ
6.1
kHz
SR
Slew Rate
AV = +1,
Falling Edge
2.9
V/ms
VIN = 0V to 1.8V
Rising Edge
2.3
θ m
Phase Margin
CL = 20 pF, RL = 100 kΩ
72
deg
Gm
Gain Margin
CL = 20 pF, RL = 100 kΩ
19
dB
en
Input-Referred Voltage Noise Density
f = 100 Hz
265
nV/
√Hz
Input-Referred Voltage Noise
0.1 Hz to 10 Hz
24
μVPP
in
Input-Referred Current Noise
f = 100 Hz
100
fA/
√Hz
(1)
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2)
All limits are guaranteed by testing, statistical analysis or design.
(3)
Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and
will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production
material.
3.3V DC Electrical Characteristics
(1)
Unless otherwise specified, all limits guaranteed for TA = 25°C, V
+ = 3.3V, V= 0V, V
CM = VO = V
+/2, and R
L > 1 MΩ.
Boldface limits apply at the temperature extremes.
Min
Typ
Max
Symbol
Parameter
Conditions
Units
(2)
(3)
(2)
VOS
Input Offset Voltage
0.1
±1.0
VCM = 0.3V
±1.23
mV
0.1
±1.0
VCM = 3V
±1.23
TCVOS
Input Offset Voltage Drift(4)
±0.4
±3
μV/°C
IBIAS
Input Bias Current
0.01
±1
pA
±50
IOS
Input Offset Current
20
fA
CMRR
Common Mode Rejection Ratio
0V
≤ VCM ≤ 3.3V
72
97
70
78
106
0V
≤ VCM ≤ 2.2V
dB
75
77
121
2.7V
≤ VCM ≤ 3.3V
76
PSRR
Power Supply Rejection Ratio
1.6V
≤ V+ ≤ 5.5V
85
109
dB
VCM = 0.3V
76
CMRR
≥ 72 dB
−0.1
3.4
CMVR
Common Mode Voltage Range
V
CMRR
≥ 70 dB
0
3.3
VO = 0.5V to 2.8V
82
120
AVOL
Large Signal Voltage Gain
dB
RL = 100 kΩ to V
+/2
76
(1)
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. Absolute Maximum Ratings indicate junction temperature limits beyond which the
device may be permanently degraded, either mechanically or electrically.
(2)
All limits are guaranteed by testing, statistical analysis or design.
(3)
Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and
will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production
material.
(4)
The offset voltage average drift is determined by dividing the change in VOS at the temperature extremes by the total temperature
change.
4
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