Mode

CE

OE

WE

I/O

Read

Standby/Write Inhibit

X

(1)

X

High Z

Write Inhibit

X

X

Write Inhibit

X

X

Output Disable

X

X

High Z

2. Refer to AC Programming Waveforms.

Operating Modes

Symbol

Parameter

Condition

Min

Max

Units

Input Load Current

10

µA

Output Leakage Current

10

µA

300

µA

3

mA

80

mA

Input Low Voltage

0.8

V

Input High Voltage

2.0

V

Output Low Voltage

.45

V

Output High Voltage

µA

2.4

V

Output High Voltage CMOS

4.2

V

DC Characteristics

AT28C010-12

AT28C010-15

AT28C010-20

AT28C010-25

Operating

Temperature (Case)

Mil.

-55°C - 125°C

-55°C - 125°C

-55°C - 125°C

-55°C - 125°C

5V

± 10%

5V

± 10%

5V

± 10%

5V

± 10%

DC and AC Operating Range

DEVICE IDENTIFICATION: An extr a 128- b y te s o f

identification. By raising A9 to 12V

± 0.5V and using ad-

dress locations 1FF80H to 1FFFFH the bytes may be writ-

ten to or read from in the same manner as the regular

memory array.

OPTIONAL CHIP ERASE MODE: The entire device can

be erased using a 6-byte software code. Please see Soft-

ware Chip Erase application note for details.

Device Operation (Continued)

2-246

AT28C010 Mil