AT28LV010

1 Megabit

(128K x 8)

Low Voltage

Paged CMOS

E

Features

Internal Address and Data Latches for 128-Bytes

Internal Control Timer

Page Write Cycle Time - 10 ms Maximum

1 to 128-Byte Page Write Operation

15 mA Active Current

20

µA CMOS Standby Current

Endurance: 100,000K Cycles

Data Retention: 10 Years

Description

The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-

mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words

by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the

device offers access times to 200 ns with power dissipation of just 54 mW. When the

device is deselected, the CMOS standby current is less than 20

µA.

(continued)

PDIP

Top View

Pin Name

Function

A0 - A16

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data

Inputs/Outputs

NC

No Connect

DC

Don’t Connect

Pin Configurations

TSOP

Top View

PLCC

Top View

0395A

AT28LV010

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