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NCV8405 Datasheet(PDF) 2 Page - ON Semiconductor |
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NCV8405 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NCV8405, NCV8405A http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 V Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) VDGR 42 V Gate−to−Source Voltage VGS "14 V Continuous Drain Current ID Internally Limited Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TT = 25°C (Note 1) Power Dissipation − DPAK Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TC = 25°C (Note 1) PD 1.0 1.7 11.4 2.0 2.5 40 W Thermal Resistance − SOT−223 Version Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Tab Steady State (Note 1) Thermal Resistance − DPAK Version Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Case Steady State (Note 1) RqJA RqJA RqJT RqJA RqJA RqJT 130 72 11 60 50 3.0 °C/W Single Pulse Drain−to−Source Avalanche Energy (VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C) EAS 275 mJ Load Dump Voltage VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms) VLD 53 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). DRAIN SOURCE GATE VDS VGS ID IG + − + − Figure 1. Voltage and Current Convention |
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