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AT28BV64-30JI Datasheet(PDF) 1 Page - ATMEL Corporation

Part # AT28BV64-30JI
Description  64K 8K x 8 Battery-Voltage CMOS E2PROM
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Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT28BV64-30JI Datasheet(HTML) 1 Page - ATMEL Corporation

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AT28BV64
64K (8K x 8)
Battery-Voltage
CMOS
E
2PROM
Features
2.7V to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50
µA CMOS Standby Current
Read Access Time - 300 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READY/BUSY Open Drain Output
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read Only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50
µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
PLCC Top View
TSOP Top View
PDIP, SOIC Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
Pin Configurations
0493A
AT28BV64
2-127


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