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SFH615A-2X019T Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SFH615A-2X019T
Description  Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH615A-2X019T Datasheet(HTML) 2 Page - Vishay Siliconix

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SFH615A
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 12-Oct-12
2
Document Number: 83433
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
DC forward current
IF
60
mA
Forward surge current
tp
≤ 10 μs
IFSM
2.5
A
LED power dissipation
at 25 °C
Pdiss
70
mW
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp
≤ 10 ms
ICM
100
mA
Ouput power dissipation
at 25 °C
Pdiss
150
mW
COUPLER
Isolation test voltage
between emitter and detector
t = 1 s
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
CTI
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Operation temperature
Tamb
- 55 to + 100
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.35
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
13
pF
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
5.2
pF
Collector emitter leakage current
VCE = 10 V
SFH615A-1
ICEO
250
nA
SFH615A-2
ICEO
250
nA
SFH615A-3
ICEO
5
100
nA
SFH615A-4
ICEO
5
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, f = 1 MHz
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.4
pF


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