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ASMT-MR00-AGH00 Datasheet(PDF) 3 Page - AVAGO TECHNOLOGIES LIMITED |
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ASMT-MR00-AGH00 Datasheet(HTML) 3 Page - AVAGO TECHNOLOGIES LIMITED |
3 / 13 page 3 Part Numbering System Note: 1. Please refer to Page 8 for selection details. ASMT-M x xx – x x1 x2 x3 x4 Packaging Option Color R – Red A – Amber G - Green B - Blue W - Cool White Y - Warm White Color Bin Selection Maximum Flux Bin Selection Minimum Flux Bin Selection Dice Type N – InGaN A – AllnGaP Silicone Type 00 – Non-diffused B1 – Diffused Absolute Maximum Ratings (T A = 25°C) Parameter ASMT-Mx00/ ASMT-MxB1 Units DC Forward Current [1] 350 mA Peak Pulsing Current [2] 1000 mA Power Dissipation for AllnGaP 805 mW Power Dissipation for InGaN 1225 mW LED Junction Temperature for AllnGaP 125 °C LED Junction Temperature for InGaN 110 °C Operating Ambient Temperature Range -40 to +100 °C Storage Temperature Range -40 to +120 °C Reverse Volttage [3] Not recommended Notes: 1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN. 2. Pulse condition duty factor = 10%, Frequency = 1kHz. 3. Not recommended for reverse bias operation. |
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