Electronic Components Datasheet Search |
|
AS8501 Datasheet(PDF) 7 Page - ams AG |
|
AS8501 Datasheet(HTML) 7 Page - ams AG |
7 / 41 page AS8501 - Data Sheet austriamicrosystems Revision 1.1, 04-April-06 www.austriamicrosystems.com Page 6 of 40 Electrical characteristics (continued) VDDA=5V +/-0.1 V, fclk=8.192 MHz, chopping ratio MM=4 (see 7.5.3), oversampling frequency=2.048 MHz, oversampling ratio=128 temperature range : -40 to 125°C if not otherwise noted symbol parameter conditions min typ max units cal_err calibration error for 30 000 digits output at full range G1, 720 mV G6, 120 mV G24, 30 mV G50, 15 mV G100, 7.5 mV 0.1 0.2 % 1) lin_err nonlinearity gain 6 @ room temp 0.1 0.3 % or 30 digits 2) gain 24 @ room temp 0.03 0.05 % or 10 digits 2) gain 50 @ room temp 0.05 0.07 % or 15 digits 2) gain 100 @ room temp 0.05 0.1 % or 20 digits 2) lin_errTC TC of linearity error all gains 1 5 ppm/K 3) Vos offset voltage: RSHH_RSHL -40 to 125°C -0.5 0.2 0.5 µV 4) offset voltage: ETS, ETR, VBAT -40 to 85°C -2 0.5 1 µV 4) 85 to 125°C -4 1 2 µV 4) dVos/dT Offset voltage drift: RSHH- RSHL -40 to 85 °C 0.002 µV/K Ib input bias/leakage current, all channels room temperature -1 0.2 1 nA 5) Vndin voltage noise density (G=24) f=0 to 1 kHz 35 50 nV//Hz 6) Indin current noise density (G=24) f=10 Hz 5 20 100 fA//Hz 6) en p_p voltage noise, peak (G=24) 0 to 100 Hz 2 3 5 µV 6) 0 to 10 Hz 0.5 1 1.5 µV 6) en_RMS voltage noise, RMS (G=24) 1000 Hz 1.5 2 µV SNR signal to noise (G=24, G4.8) room temperature 90 100 dBmin SDR signal to distortion (G24, G4.8) room temperature 80 100 dBmin CCI chanel to chanel insulation room temperature -70 -90 dBmax PSRR power supply rejection ratio 4.9 to 5.1 V -50 -60 dBmax Notes: 1) at room temperature / corresponding calibration factors are stored within the ZZR-register 2 ) whatever is lower. Maximum limits for gains 50 and 100 are derived from device characterization and are not tested. 3) this value measured in raw mode at room temperature and at 60°C. Maximum limits over temperature range are derived from device characterization. 4) TC variations are included in the above given maximum limit of linearity error. Max value is derived from device characterization and not tested 5) Leakage current is specified for all gain settings (except G1) for positive input voltages below 200 mV. Test is done at different input voltages with subsequent extrapolation for 200mV. In the temperature range 85-125°C it may be as high as 5 nA at the upper limit. In normal operation a temperature independent digital offset of -0.7 digits is present due to internal rounding. 6) This parameter is not measured directly. It is measured indirectly via gain measurement of the whole path at room temperature |
Similar Part No. - AS8501 |
|
Similar Description - AS8501 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |