MP4015Q datasheet(2/4 Pages) TOSHIBA

Part #	MP4015Q

Description	TOSHIBA Power Transistor Module

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

MP4015

2006-10-27

2

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance from junction to

ambient

(4-device operation, Ta = 25°C)

ΣRth (j-a)

31.3

°C/W

Maximum lead temperature for

soldering purposes

(3.2 mm from case for 10 s)

TL

260

°C

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 45 V, IE = 0 A

―

10

μA

Collector cut-off current

ICEO

VCE = 45 V, IB = 0 A

―

10

μA

Emitter cut-off current

IEBO

VEB = 6 V, IC = 0 A

0.3

―

10

mA

Collector-base breakdown voltage

V (BR) CBO

IC = 10 mA, IE = 0 A

50

―

70

V

hFE (1)

VCE = 4 V, IC = 1 A

1000

―

DC current gain

hFE (2)

VCE = 4 V, IC = 3 A

1000

―

VCE (sat) (1) IC = 1 A, IB = 4 mA

―

0.9

1.4

Collector-emitter

VBE (sat) (2) IC = 3 A, IB = 10 mA

―

1.3

2.0

Saturation voltage

Base-emitter

VBE (sat)

IC = 1 A, IB = 4 mA

―

1.6

2.0

V

Base-emitter voltage

VBE

VCE = 4 V, IB = 3 A

―

1.8

2.5

V

Transition frequency

fT

VCE = 3 V, IC = 0.5 A

7

―

MHz

Collector output capacitance

Cob

VCB = 10 V, IE = 0 A, f = 1 MHz

―

44

―

pF

Turn-on time

ton

―

0.6

―

Storage time

tstg

―

4.2

―

Switching time

Fall time

tf

IB1 = −IB2 = 10 mA, duty cycle ≤ 1%

―

2.3

―

μs

Unclamped inductive load energy

ES/B

Refer to Figure 1

100

―

mJ

Note 1: Pulse width adjusted for desired ICP (ICP = 4.48 A min)

Note 2:

2

CP

S/B

I

L

2

1

E

･

=

20 μs

VCC = 30 V

Output

IB2

IB1

Input

Figure 1 Measurement Circuit of Unclamped Inductive Load Energy ES/B

T.U.T

IB1 = 0.1 A

IB2 = −0.1 A

VCC = 20 V

IB1

0

ICP

IC

VCE

IB2

PW

Clamp (C-B zener)

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