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SI2323CDS Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI2323CDS Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si2323CDS Document Number: 65700 S13-2081-Rev. B, 30-Sep-13 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com P-Channel 20 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load Switch • PA Switch • DC/DC Converters Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. e. Package limited. MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) -20 0.039 at VGS = -4.5 V -6e 9 nC 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 G TO-236 (SOT-23) S D Top View 2 3 1 Si2323CDS (P3)* * Marking Code Ordering Information: Si2323CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID -6e A TC = 70 °C -5.2 TA = 25 °C -4.6b, c TA = 70 °C -3.7b, c Pulsed Drain Current IDM -20 Continuous Source-Drain Diode Current TC = 25 °C IS -2.1 TA = 25 °C -1b, c Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 |
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