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SI3445DV-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI3445DV-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 70820 S09-0766-Rev. C, 04-May-09 www.vishay.com 3 Vishay Siliconix Si3445DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 4 8 12 16 20 01234 2.5 V 2 V 1.5 V VDS - Drain-to-Source Voltage (V) 1 V 1.8 V VGS = 5 V thru 3 V 0.00 0.04 0.08 0.12 0.16 0.20 04 8 12 16 20 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) VGS = 1.8 V 0 1 2 3 4 5 04 8 12 16 VDS = 4 V ID = 5.6 A Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = - 55 °C 125 °C VGS - Gate-to-Source Voltage (V) 25 °C 0 500 1000 1500 2000 2500 0246 8 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.75 1.00 1.25 1.50 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 5.6 A TJ -Junction Temperature (°C) |
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