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OP482ACBZ-R7 Datasheet(PDF) 3 Page - Analog Devices |
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OP482ACBZ-R7 Datasheet(HTML) 3 Page - Analog Devices |
3 / 16 page Data Sheet OP282/OP482 Rev. I | Page 3 of 16 SPECIFICATIONS ELECTRICAL CHARACTERISTICS At VS = ±15.0 V, TA = 25°C, unless otherwise noted; applies to both A and G grades. Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS OP282 0.2 3 mV OP282, −40°C ≤ TA ≤ +85°C 4.5 mV OP482 0.2 4 mV OP482, −40°C ≤ TA ≤ +85°C 6 mV Input Bias Current IB VCM = 0 V 3 100 pA VCM = 0 V1 500 pA Input Offset Current IOS VCM = 0 V 1 50 pA VCM = 0 V1 250 pA Input Voltage Range −11 +15 V Common-Mode Rejection Ratio CMRR −11 V ≤ VCM ≤ +15 V, −40°C ≤ TA ≤ +85°C 70 90 dB Large-Signal Voltage Gain AVO RL = 10 kΩ, VO = ±13.5 V 20 V/mV RL = 10 kΩ, −40°C ≤ TA ≤ +85°C 15 V/mV Offset Voltage Drift ΔVOS/ΔT 10 µV/°C Bias Current Drift ΔIB/ΔT 8 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 10 kΩ 13.5 13.9 V Output Voltage Low VOL RL = 10 kΩ −13.9 −13.5 V Short-Circuit Limit ISC Source 3 10 mA Sink −12 −8 mA Open-Loop Output Impedance ZOUT f = 1 MHz 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V, −40°C ≤ TA ≤ +85°C 25 316 µV/V Supply Current/Amplifier ISY VO = 0 V, −40°C ≤ TA ≤ 85°C 210 250 µA Supply Voltage Range VS ±4.5 ±18 V DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 7 9 V/µs Full-Power Bandwidth BWP 1% distortion 125 kHz Settling Time tS To 0.01% 1.6 µs Gain Bandwidth Product GBP 4 MHz Phase Margin ØM 55 Degrees NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 1.3 µV p-p Voltage Noise Density en f = 1 kHz 36 nV/√Hz Current Noise Density in 0.01 pA/√Hz 1 The input bias and offset currents are characterized at TA = TJ = 85°C. Bias and offset currents are guaranteed but not tested at −40°C. |
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