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SPN09T10T251TGB Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPN09T10T251TGB Datasheet(HTML) 1 Page - SYNC POWER Crop. |
1 / 10 page 2012/07/03 Ver.5 Page 1 SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Powered System DC/DC Converter Load Switch FEATURES PIN CONFIGURATION TO-252 TO-251 TO-263 PART MARKING 100V/8A,RDS(ON)= 160mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251,TO-263 package design A: Lot Code B: Date Code G D S SPN09T10 AAAAAA BBBBBB |
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