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MCP9509 Datasheet(PDF) 3 Page - Microchip Technology |
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MCP9509 Datasheet(HTML) 3 Page - Microchip Technology |
3 / 28 page © 2008 Microchip Technology Inc. DS22114A-page 3 MCP9509/10 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDD.................................................................................. 6.0V Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V Input/Output Current .....................................................20 mA Storage temperature .....................................-65°C to +150°C Ambient temp. with power applied ................-40°C to +125°C Junction Temperature (TJ) .......................................... +150°C ESD protection on all pins (HBM:MM) ................. (4 kV/400V) Latch-Up Current at each pin (25°C) ....................... ±200 mA †Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, V DD = 2.7V to 5.5V, T A = -40°C to +125°C, and GND = Ground. Parameters Sym Min Typ Max Unit Conditions Sensor Accuracy TA = +25°C, +45°C TACY —±0.5 — °C Note 1 0°C ≤ T A ≤ +125 °C -3.5 ±1 +3.5 °C -20°C ≤ T A ≤ +125 °C -4.5 ±1 +4.5 °C -40°C ≤ T A ≤ +125 °C — ±2 — °C Power Supply Operating Voltage VDD 2.7 — 5.5 V Operating Current (MCP9509) IDD —30 50 µA Operating Current (MCP9510) IDD — 50 80 µA OUTSET = GND or VDD — 100 165 µA OUTSET = Unconnected Hysteresis Trip Point Hysteresis THYST — +2 — °C HYST = GND — +10 — °C HYST = VDD Hysteresis Select: Input (HYST) Thresholds VIH VDD -0.4 — — V VIL —— 0.4 V Hysteresis Input (HYST) Leakage ILeak —1 — µA MCP9510 Output Control Input (OUTSET Input) OUTSET Input Voltage Threshold and Output Configuration Push-Pull, Active Low VOSET GND — 0.2VDD V Open-Drain with ROUT, Active Low 0.45VDD —0.7VDD V or OUTSET Unconnected Push-Pull, Active High 0.85VDD —VDD V OUTSET Input Leakage and Output Configuration Push-Pull, Active Low ILeak —10 — µA GND ≤ V OSET ≤ 0.2VDD Open-Drain, Active Low — 0 — µA Unconnected (i.e. open) —7 — µA 0.4VDD ≤ VOSET ≤ 0.7VDD Push-Pull, Active High — -10 — µA 0.85 ≤ V OSET ≤ VDD OUTSET Input Impedance ZOUTSET —500 — k Ω Note 1: This specification is tested at mid supply of 4.1V for optimum operation across the supply voltage range of 2.7V to 5.5V. |
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