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AS1359-BTTT-26 Datasheet(PDF) 11 Page - ams AG

Part # AS1359-BTTT-26
Description  150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators
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Manufacturer  AMSCO [ams AG]
Direct Link  http://www.ams.com
Logo AMSCO - ams AG

AS1359-BTTT-26 Datasheet(HTML) 11 Page - ams AG

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www.austriamicrosystems.com
Revision 1.5
10 - 16
AS1358 / AS1359
Datasheet - Application In form atio n
9.3 Power Dissipation
Maximum power dissipation (PD) of the LDO is the sum of the power dissipated by the internal series MOSFET and the quiescent current
required to bias the internal voltage reference and the internal error amplifier, and is calculated as:
Watts
(EQ 3)
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is calculated as:
Watts
(EQ 4)
Total LDO power dissipation is calculated as:
Watts
(EQ 5)
9.4 Junction Temperature
Under all operating conditions, the maximum junction temperature should not be allowed to exceed 125ºC (unless the data sheet specifically
allows). Limiting the maximum junction temperature requires knowledge of the heat path from junction to case (
JCºC/W fixed by the IC
manufacturer), and adjustment of the case to ambient heat path (
CAºC/W) by manipulation of the PCB copper area adjacent to the IC position.
Figure 20. Package Physical Arrangements
Figure 21. Steady State Heat Flow Equivalent Circuit
PD MAX
 Seriespass

ILOAD MAX

=
VIN MAX

VOUT MIN


PD MAX
 Bias

VIN MAX
IQ
=
PD MAX
 Total

PD MAX
 Seriespass
 PD
MAX

+
Bias

=
Bond Wire
Chip
PCB
Package
Lead Frame
SOTxx Package
Junction
TJ°C
Package
TC°C
PCB/Heatsink
TS°C
Ambient
TA°C
Chip
Power
R
JC
R
CS
R
SA


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