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AS1130D-BWLT Datasheet(PDF) 5 Page - ams AG |
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AS1130D-BWLT Datasheet(HTML) 5 Page - ams AG |
5 / 39 page www.austriamicrosystems.com/LED-Driver-ICs/AS1130 Revision 1.07 4 - 38 AS1130 Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s 6 Electrical Characteristics VDD = 2.7V to 5.5V, typ. values are at TAMB = +25ºC (unless otherwise specified). All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or SQC (Statistical Quality Control) methods. Table 3. Electrical Characteristics Symbol Parameter Conditions Min Typ Max Unit TAMB Operating Temperature Range -40 85 °C TJ Operating Junction Temperature Range -40 125 °C VDD Operating Supply Voltage 2.7 5.5 V IDD Operating Supply Current All current sources turned ON @ VDD = 5.5V 340 mA All current sources turned OFF @ VDD = 5.5V 0.5 IDDSSD Software Shutdown Supply Current All digital inputs at VDD or GND @ VDD = 5.5V 7 15 A IDDFSD Full Shutdown Supply Current Pin RSTN = 0V, TAMB = +25ºC 0.1 1 A IDIGIT Digit Drive Sink Current (Drive capability of all sources of one digit 1 ) 1. guaranteed by design 360 mA ISEG Segment Drive Source Current LED 2 2. VOUT = 1.8V to VDD-400mV 28 30 32 mA ∆ISEG Segment Drive Current Matching LED 1 % Device to Device Current Matching LED VOUT = 1.8V, VDD = 3.3V 1 % ILEAK Leakage Output Current All current sources OFF, VOUT = 0V, VDD = 5.5V, TAMB = +25ºC 0.005 0.5 A ∆ILNR Line Regulation VOUT = 1.8V 0.25 %/V ∆ILDR Load Regulation VOUT = 1.8V to VDD-400mV 0.25 %/V VDSSAT Saturation Voltage Current = 30mA, VDD = 3.3V 200 mV RDSON(N) Resistance for NMOS 0.3 1 Ω Open Detection Level Threshold VDD- 0.4 VDD- 0.1 V Short Detection Level Threshold 770 900 mV fOSC Oscillator Frequency 0.9 1 1.1 MHz fREFRESH Display Scan Rate 12x11 matrix 0.29 0.33 0.36 kHz tRSTN Reset Pulse Width Low 500 ns I SEG I max I min – I max I min + --------------------------- 100 × = |
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