MCR72-8 datasheet(3/7 Pages) ONSEMI

Part #	MCR72-8

Description	Sensitive Gate Silicon Controlled Rectifiers

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Manufacturer	ONSEMI [ON Semiconductor]

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MCR72−3, MCR72−6, MCR72−8

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

2.2

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

60

°C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Secs

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current (Note 2)

(VAK = Rated VDRM or VRRM; RGK = 1 kW)TJ = 25°C

TJ = 110°C

IDRM, IRRM

−

10

500

mA

High Logic Level Supply Current from VCC

ICCH

4

mA

ON CHARACTERISTICS

Peak Forward On-State Voltage

(ITM = 16 A Peak, Pulse Width p1 ms, Duty Cycle p2%)

VTM

−

1.7

2.0

V

Gate Trigger Current (Continuous dc) (Note 3)

(VD = 12 V, RL = 100 W)

IGT

−

30

200

mA

Gate Trigger Voltage (Continuous dc) (Note 3)

(VD = 12 V, RL = 100 W)

VGT

−

0.5

1.5

V

Gate Non−Trigger Voltage

(VD = 12 Vdc, RL = 100 W, TJ = 110°C)

VGD

0.1

−

V

Holding Current

(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kW)

IH

−

6.0

mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 16 A, IG = 2 mA)

tgt

−

1.0

−

ms

DYNAMIC CHARACTERISTICS

Critical Rate-of-Rise of Off-State Voltage

(VD = Rated VDRM, RGK = 1 kW, TJ = 110°C, Exponential Waveform)

dv/dt

−

10

−

V/ms

2. Ratings apply for negative gate voltage or RGK =1kW. Devices shall not have a positive gate voltage concurrently with a negative voltage

on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the

voltage applied exceeds the rated blocking voltage.

3. RGK current not included in measurement.

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