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LM4040D Datasheet(PDF) 10 Page - ON Semiconductor |
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LM4040D Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 14 page LM4040, LM4041 http://onsemi.com 10 Device Description The LM404x shunt references use ON Semiconductor’s floating gate (EEPROM) technology to produce a capacitor which stores an accurate and stable voltage that is used as the reference voltage for a control amplifier and shunt N−channel FET. Figure 12. Functional Block Diagram VREF − − + + + The device operates like a zener diode; maintaining a fixed voltage across its output terminals when biased with 60 mA to 15 mA of reverse current. The LM404x will also act like a silicon diode when forward biased with currents up to 10 mA. Applications Information The LM404x’s internal pass transistor maintains a constant output voltage by sinking the necessary amount of current across a source resistor. The source resistance (RS) is set by the load current range (ILOAD), supply voltage (VS) variations, LM404x’s terminal voltage (VR), and desired quiescent current. Figure 13. Typical Operating Circuit ISHUNT ILOAD RS VS VR To select a value of RS, set VS at its minimum value and ILOAD at its maximum. Be sure to maintain a minimum operating current of 60 mA through LM404x at all times, as LM404x uses this current to power its internal circuitry. The RS value should be large enough to keep ISHUNT less than 15 mA for proper regulation when VS is maximum and ILOAD is at a minimum. Therefore, the value of RS is bounded by the following equation: VS(min) * VR 60 mA ) ILOAD(max) u RS and RS u VS(max) * VR 15 mA ) ILOAD(min) Choosing a larger resistance minimizes the power dissipated in the circuit by reducing the shunt current. Output Capacitance The LM404x does not require an external capacitor for frequency stability and is stable for any output capacitance. Effect of Temperature LM404x has an output voltage temperature coefficient of typically ±15 to ±30 ppm/°C meaning the LM404x’s output voltage will change by 50 – 100 mV/°C for a 3.300 V regulator. The polarity of this temperature induced voltage shift can vary from device to device, some moving in the positive direction and others in the negative direction. |
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