2013/12/25

Ver.1

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SPC6601

N & P Pair Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

The SPC6601 is the N- and P-Channel enhancement

mode power field effect transistors are produced using

high cell density , DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications

such

as

notebook

computer

power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.



Power Management in Note book



Portable Equipment



Battery Powered System



DC/DC Converter



Load Switch



DSC



LCD Display inverter

FEATURES

PIN CONFIGURATION( TSOT– 23-6P )



N-Channel



P-Channel



Super high density cell design for extremely low

RDS (ON)



Exceptional on-resistance and maximum DC

current capability



TSOT– 23-6P package design

PART MARKING