LM4050-N, LM4050-N-Q1

SNOS455E – MAY 2000 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Reverse Current

20 mA

Forward Current

10 mA

(3)

DBZ Package

280 mW

Storage Temperature

−65°C to +150°C

Vapor phase (60 seconds)

+215°C

Lead Temperature

DBZ Package

Infrared (15 seconds)

+220°C

2 kV

ESD Susceptibility

200V

See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see

the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics

may degrade when the device is not operated under the listed test conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

(4)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin. The machine model is a 200 pF

capacitor discharged directly into each pin.

Operating Ratings

(1)

Temperature Range

Industrial Temperature Range

Extended temperature Range

LM4050-N-2.0,

60

μA to 15 mA

LM4050-N-2.5

60

μA to 15 mA

LM4050-N-4.1

68

μA to 15 mA

Reverse Current

LM4050-N-5.0

74

μA to 15 mA

LM4050-N-8.2

91

μA to 15 mA

LM4050-N-10.0

100

μA to 15 mA

(1)

2

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