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SIHF9510S-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHF9510S-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91073 4 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9510S, SiHF9510S Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 350 280 210 140 0 70 100 101 - VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91073_05 91071_06 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 15 75 60 45 30 I D = 8.0 A For test circuit see figure 13 V DS = 250 V V DS = 100 V V DS = 400 V 101 100 - VSD, Source-to-Drain Voltage (V) 1.0 5.0 4.0 3.0 2.0 25 °C 175 °C V GS = 0 V 91073_07 10-1 91071_08 10 µs 100 µs 1 ms 10 ms T C = 25 °C T J = 150 °C Single Pulse VDS, Drain-to-Source Voltage (V) 102 0.1 2 5 2 1 5 10 2 5 25 1 25 10 25 102 25 103 25 104 0.1 Operation in this area limited by R DS(on) |
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