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CWDM305PD Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CWDM305PD Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page CWDM305PD SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305PD is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low gate charge. MARKING CODE: C503 MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 16 V Continuous Drain Current (Steady State) ID 5.3 A Maximum Pulsed Drain Current, tp=10μs IDM 21.2 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF, IGSSR VGS=20V, VDS=0 100 nA IDSS VDS=30V, VGS=0 1.0 μA BVDSS VGS=0, ID=250μA 30 V VGS(th) VGS=VDS, ID=250μA 1.0 3.0 V rDS(ON) VGS=10V, ID=2.7A 0.066 0.072 Ω rDS(ON) VGS=5.0V, ID=2.7A 0.077 0.083 Ω gFS VDS=5.0V, ID=5.3A 11 S Crss VDS=10V, VGS=0, f=1.0MHz 50 60 pF Ciss VDS=10V, VGS=0, f=1.0MHz 500 590 pF Coss VDS=10V, VGS=0, f=1.0MHz 60 150 pF Qg(tot) VDD=15V, VGS=5.0V, ID=5.3A 4.7 7.0 nC Qgs VDD=15V, VGS=5.0V, ID=5.3A 1.4 2.1 nC Qgd VDD=15V, VGS=5.0V, ID=5.3A 1.7 2.5 nC ton VDD=15V, ID=5.3A, RG=10Ω 7.0 ns toff VDD=15V, ID=5.3A, RG=10Ω 8.0 ns FEATURES: • Low rDS(ON) (83mΩ MAX @ VGS=5.0V) • High current (ID=5.3A) APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment SOIC-8 CASE R2 (23-August 2012) www.centr a lsemi.com |
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