Electronic Components Datasheet Search |
|
AUIRLU3114Z Datasheet(PDF) 1 Page - International Rectifier |
|
AUIRLU3114Z Datasheet(HTML) 1 Page - International Rectifier |
1 / 14 page 06/22/11 www.irf.com 1 Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Logic Level l Lead-Free, RoHS Compliant l Automotive Qualified * AUIRLR3114Z AUIRLU3114Z HEXFET® Power MOSFET AUTOMOTIVE GRADE Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Description HEXFET® is a registered trademark of International Rectifier. * Qualification standards can be found at http://www.irf.com/ GD S Gate Drain Source D-Pak AUIRLR3114Z G S D I-Pak AUIRLU3114Z G D S S D G Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energy d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case j ––– 1.05 RθJA Junction-to-Ambient (PCB mount) i ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 -55 to + 175 300(1.6mm from case) 140 0.95 ±16 Max. 130 k 89 k 500 42 260 130 See Fig.12a, 12b, 15, 16 VDSS 40V RDS(on) max @ 10V 4.9m Ω max @ 4.5V 6.5m Ω ID (Silicon Limited) 130A k ID (Package Limited) 42A PD - 96381 |
Similar Part No. - AUIRLU3114Z |
|
Similar Description - AUIRLU3114Z |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |