BSS84AKW datasheet(1/16 Pages) PHILIPS

Part #	BSS84AKW

Description	50 V, 150 mA P-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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1.

Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 1 kV

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

1.4 Quick reference data

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

BSS84AKW

50 V, 150 mA P-channel Trench MOSFET

Rev. 1 — 23 May 2011

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj = 25 °C

---50

V

VGS

gate-source voltage

-20

-

20

V

ID

drain current

VGS =-10 V; Tamb =25°C

[1]

---150

mA

Static characteristics

RDSon

drain-source on-state

resistance

VGS =-10 V; ID = -100 mA;

Tj =25 °C

-4.5

7.5

Ω

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