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IRF9310PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF9310PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF9310PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C RDS(on) ––– 3.9 4.6 ––– 5.8 6.8 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 39 ––– ––– S Qg Total Gate Charge h ––– 58 ––– nC VDS = -15V, VGS = -4.5V, ID = - 16A Qg Total Gate Charge h ––– 110 165 Qgs Gate-to-Source Charge h ––– 17 ––– Qgd Gate-to-Drain Charge h ––– 28 ––– RG Gate Resistance h ––– 2.8 ––– Ω td(on) Turn-On Delay Time ––– 25 ––– tr Rise Time ––– 47 ––– td(off) Turn-Off Delay Time ––– 65 ––– tf Fall Time ––– 70 ––– Ciss Input Capacitance ––– 5250 ––– Coss Output Capacitance ––– 1300 ––– Crss Reverse Transfer Capacitance ––– 880 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 71 107 ns Qrr Reverse Recovery Charge ––– 12 18 nC Thermal Resistance Parameter Units RθJL Junction-to-Drain Lead g RθJA Junction-to-Ambient f Typ. ––– ––– °C/W Max. 20 50 Static Drain-to-Source On-Resistance A ––– ––– ––– ––– -2.5 -160 nA nC ns pF ––– Typ. ––– RG = 1.8 Ω VDS = -10V, ID = -16A VDS = -24V, VGS = 0V, TJ = 125°C VDD = -15V, VGS = -4.5V e ID = -1.0A VDS = -15V VGS = -20V VGS = 20V VGS = -10V m Ω µA TJ = 25°C, IF = -2.5A, VDD = -24V di/dt = 100A/µs e TJ = 25°C, IS = -2.5A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol ID = -16A VDS = -24V, VGS = 0V Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -20A e VDS = VGS, ID = -100µA VGS = -4.5V, ID = -16A e Conditions See Figs. 20a &20b Max. 630 -16 ƒ = 1.0MHz VGS = 0V VDS = -15V |
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