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BAW56 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BAW56 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 15 page BAV756S_BAW56_SER_5 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 05 — 26 November 2007 6 of 15 NXP Semiconductors BAV756S; BAW56 series High-speed switching diodes (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Based on square wave currents. Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C f = 1 MHz; Tamb =25 °C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 006aab109 VF (V) 0.2 1.4 1.0 0.6 1 10 102 103 IF (mA) 10−1 (1) (2) (3) (4) mbg704 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 006aab110 10−2 10−4 10−3 10 1 10−1 102 IR ( µA) 10−5 VR (V) 0 100 80 40 60 20 (1) (2) (3) (4) 025 VR (V) 2.5 0 0.5 mbh191 1.0 1.5 2.0 5 Cd (pF) 10 15 20 |
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