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74AVC2T45GF Datasheet(PDF) 9 Page - NXP Semiconductors |
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74AVC2T45GF Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 27 page 74AVC2T45 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 7 — 8 February 2013 9 of 27 NXP Semiconductors 74AVC2T45 Dual-bit, dual-supply voltage level translator/transceiver; 3-state 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” [1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. ten is a calculated value using the formula shown in Section 13.4 “Enable times” [1] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of the outputs. [2] fi = 10 MHz; VI =GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = . Table 9. Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7 Symbol Parameter Conditions VCC(B) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V tpd propagation delay A to B 15.5 8.1 7.6 7.7 8.4 9.2 ns B to A 15.5 12.7 12.3 12.2 12.0 11.8 ns tdis disable time DIR to A 12.2 12.2 12.2 12.2 12.2 12.2 ns DIR to B 11.7 7.9 7.6 8.2 8.7 10.2 ns ten enable time DIR to A 27.2 20.6 19.9 20.4 20.7 22.0 ns DIR to B 27.7 20.3 19.8 19.9 20.6 21.4 ns Table 10. Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7 Symbol Parameter Conditions VCC(A) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V tpd propagation delay A to B 15.5 12.7 12.3 12.2 12.0 11.8 ns B to A 15.5 8.1 7.6 7.7 8.4 9.2 ns tdis disable time DIR to A 12.2 4.9 3.8 3.7 2.8 3.4 ns DIR to B 11.7 9.2 9.0 8.8 8.7 8.6 ns ten enable time DIR to A 27.2 17.3 16.6 16.5 17.1 17.8 ns DIR to B 27.7 17.6 16.1 15.9 14.8 15.2 ns Table 11. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2] Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC(A) and VCC(B) Unit 0.8 V 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V CPD power dissipation capacitance A port: (direction A to B); B port: (direction B to A) 122 222 pF A port: (direction B to A); B port: (direction A to B) 911 11 12 14 17 pF |
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