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SBAV99LT3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # SBAV99LT3G
Description  Dual Series Switching Diode
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SBAV99LT3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 9
1
Publication Order Number:
BAV99LT1/D
BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
215
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
70
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM
2.0
1.0
0.5
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR−5 Board (Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−65 to
+150
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
CASE 318
SOT−23
STYLE 11
MARKING DIAGRAM
3
CATHODE/ANODE
ANODE
1
CATHODE
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV99LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BAV99LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
http://onsemi.com
1
A7 MG
G
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
A7 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
SBAV99LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAV99LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel


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