MTY30N50E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

10000

1000

100

10

1

0

200

300

400

500

100

°C

25

°C

2.5

2

1.5

1

0.5

0

– 50

– 25

0

25

50

75

100

125

150

VGS = 10 V

ID = 15 A

0.17

0.16

0.15

0.14

0.13

0.12

ID, DRAIN CURRENT (AMPS)

15 V

0.35

0.3

0.25

0.2

0.05

0

0

20

40

60

50

30

10

60

0

0

2

4

6

8

10

12

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

0

TJ = 25°C

VGS = 10 V

VDS ≥ 10 V

VGS = 10 V

TJ = 100°C

– 55

°C

TJ = 25°C

VGS = 10 V

VGS = 0 V

50

40

30

20

60

50

40

30

20

10

2

2.5

3

3.5

4

4.5

5

5.5

6

6.5

7

0

20

40

60

50

30

10

TJ = 125°C

10

0.15

0.1

100

6 V

8 V

5 V

4 V

25

°C

TJ = – 55°C

100

°C

25

°C