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TJA1040 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # TJA1040
Description  High speed CAN transceiver
Download  17 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

TJA1040 Datasheet(HTML) 5 Page - NXP Semiconductors

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2003 Oct 14
5
Philips Semiconductors
Product specification
High speed CAN transceiver
TJA1040
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Equivalent to discharging a 100 pF capacitor via a 1.5 k
Ω series resistor.
2. Equivalent to discharging a 200 pF capacitor via a 0.75
µH series inductor and a 10 Ω series resistor.
3. Junction temperature in accordance with IEC 60747-1. An alternative definition of Tvj is: Tvj =Tamb +P × Rth(vj-amb),
where Rth(vj-amb) is a fixed value to be used for the calculating of Tvj. The rating for Tvj limits the allowable
combinations of power dissipation (P) and ambient temperature (Tamb).
THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
QUALITY SPECIFICATION
Quality specification in accordance with
“AEC-Q100”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
no time limit
−0.3
+6
V
operating range
4.75
5.25
V
VTXD
DC voltage on pin TXD
−0.3
VCC + 0.3 V
VRXD
DC voltage on pin RXD
−0.3
VCC + 0.3 V
VSTB
DC voltage on pins STB
−0.3
VCC + 0.3 V
VCANH
DC voltage on pin CANH
0 < VCC < 5.25 V; no time limit
−27
+40
V
VCANL
DC voltage on pin CANL
0 < VCC < 5.25 V; no time limit
−27
+40
V
VSPLIT
DC voltage on pin SPLIT
0 < VCC < 5.25 V; no time limit
−27
+40
V
Vtrt
transient voltages on pins CANH,
CANL and SPLIT
according to ISO 7637; see Fig.5
−200
+200
V
Vesd
electrostatic discharge voltage
Human Body Model (HBM); note 1
pins CANH and CANL
and SPLIT
−6+6
kV
all other pins
−4+4
kV
Machine Model (MM); note 2
−200
+200
V
Tvj
virtual junction temperature
note 3
−40
+150
°C
Tstg
storage temperature
−55
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(vj-a)
thermal resistance from virtual junction
to ambient in SO8 package
in free air
145
K/W
Rth(vj-s)
thermal resistance from virtual junction
to substrate of bare die
in free air
50
K/W


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