STW25N95K3 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STW25N95K3

Description	N-channel 950 V, 0.32 ohm, 22 A, TO-247

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STW25N95K3

Electrical ratings

Doc ID 15584 Rev 2

3/13

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

22

A

ID

Drain current (continuous) at TC = 100 °C

13.9

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

88

A

PTOT

Total dissipation at TC = 25 °C

400

W

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

28

A

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

450

mJ

dv/dt(2)

2.

ISD ≤ 22 A, di/dt ≤ 100 A/µs, peak VDS ≤V(BR)DSS

Peak diode recovery voltage slope

5

V/ns

VESD(G-S) G-S ESD (HBM C=100 pF; R=1.5 kΩ)6000

V

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.31

°C/W

Rthj-amb

Thermal resistance junction-ambient max

50

°C/W

TJ

Maximum lead temperature for soldering purpose

300

°C/W

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