MTY30N50E datasheet(6/8 Pages) MOTOROLA

Part #	MTY30N50E

Description	TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM

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Manufacturer	MOTOROLA [Motorola, Inc]

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MTY30N50E

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

1

0.1

0.01

1.0E–05

1.0E–04

1.0E–03

1.0E–02

1.0E–01

1.0E+00

1.0E+01

t, TIME (s)

D = 0.5

0.2

0.1

0.05

0.02

0.01

3000

2500

1000

0

25

50

75

100

125

150

100

10

1

0.1

1

10

100

1000

100

µs

1 ms

10 ms

dc

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

Figure 13. Thermal Response

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

VGS = 20 V

SINGLE PULSE

TC = 25°C

ID = 30 A

SINGLE PULSE

2000

1500

500

10

µs

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

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Similar Description - MTY30N50E

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MTE30N50E	229Kb / 8P	TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.150 OHM
	MTP3055V	160Kb / 8P	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
	MTD3055V	206Kb / 10P	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
	MTD2N50E	299Kb / 10P	TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
	MTP2P50E	230Kb / 8P	TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
	MTW20N50E	193Kb / 8P	TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM
	MTE53N50E	167Kb / 8P	TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM
	MTP1N50E	159Kb / 8P	TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
	MTV16N50E	276Kb / 10P	TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
	MTV20N50E	273Kb / 10P	TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM

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MTY30N50E Datasheet(PDF) 6 Page - Motorola, Inc

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