FJA4310OTU datasheet(2/5 Pages) FAIRCHILD

Part #	FJA4310OTU

Description	NPN Epitaxial Silicon Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FJA4310 Rev. C1

2

Typical Characteristics

Figure 1. Static Characterstic

Figure 2. DC current Gain

Figure 3. VCE(sat) vs. IB Characteristics

Figure 4. Collector-Emitter Saturation Voltage

Figure 5. Base-Emitter On Voltage

Figure 6. Forward Bias Safe Operating Area

0

1

2

3

4

0

1

2

3

4

5

6

7

8

9

10

I

B = 400mA

I

B = 300mA

I

B = 20mA

I

B = 250mA

I

B = 200mA

I

B = 150mA

I

B = 100mA

I

B = 50mA

V

CE [V], COLLECTOR-EMITTER VOLTAGE

0.1

1

10

100

1000

V

CE = 4 V

Ta = 25

oC

Ta = 125

oC

Ta = - 25

oC

I

C [A], COLLECTOR CURRENT

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I

C= - 10A

I

C= - 5A

I

B [A], BASE CURRENT

0.01

0.1

1

10

0.01

0.1

1

I

C = 10 IB

Ta = 25

oC

Ta = 125

oC

Ta = - 25

oC

I

C [A], COLLECTOR CURRENT

0.0

0.5

1.0

1.5

0

2

4

6

8

10

V

CE = 4 V

Ta = 25

oC

Ta = 125

oC

Ta = - 25

oC

V

BE [V], Base-Emitter On VOLTAGE

10

100

0.1

1

10

t=10ms

t=100ms

T

C = 25

oC

Single Pulse

I

C (Pulse)

I

C (DC)

V

CE [V], COLLECTOR-EMITTER VOLTAGE

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