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PTVS3V3P1UTP Datasheet(PDF) 3 Page - NXP Semiconductors |
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PTVS3V3P1UTP Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 11 October 2011 3 of 12 NXP Semiconductors PTVSxP1UTP series High-temperature 600 W Transient Voltage Suppressor 5. Limiting values [1] In accordance with IEC 61643-321 (10/1000 s current waveform). [1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses. 6. Thermal characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Soldering point of cathode tab. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPPM rated peak pulse power [1] -600 W IPPM rated peak pulse current [1] -see Table 9 and 10 IFSM non-repetitive peak forward current single half-sine wave; tp =8.3 ms -100 A Tj junction temperature - 185 C Tamb ambient temperature 55 +185 C Tstg storage temperature 65 +185 C Table 6. ESD maximum ratings Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode VESD electrostatic discharge voltage IEC 61000-4-2, level 4 (contact discharge) [1] -30 kV Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV Table 8. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] --200 K/W [2] --120 K/W [3] --60 K/W Rth(j-sp) thermal resistance from junction to solder point [4] --12 K/W |
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