STD30NE06L datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STD30NE06L

Description	N - CHANNEL 60V - 0.025 ohm - 30A TO-252

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STD30NE06L

N - CHANNEL 60V - 0.025

Ω - 30A TO-252

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.025

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

APPLICATION ORIENTED

CHARACTERIZATION

s

ADD SUFFIX "T4" FOR ORDERING IN TAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

"Single

Feature

Size

™" strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

®

INTERNAL SCHEMATIC DIAGRAM

May 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)60

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC30

A

ID

Drain Current (continuous) at Tc = 100

oC21

A

IDM(

•)

Drain Current (pulsed)

120

A

Ptot

Total Dissipation at Tc = 25

o C55

W

Derating Factor

0.37

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1) ISD

≤30A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STD30NE06L

60 V

< 0.03

Ω

30 A

1

3

DPAK

TO-252

(Suffix "T4")

1/8

Obsolete

Product(s)

- Obsolete

Product(s)

Obsolete

Product(s)

- Obsolete

Product(s)

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