Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,

the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks

of Cree, Inc.

2

CPR3BV Rev. H

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Maximum Ratings at T

Notes &3

CxxxXT290-Sxx00-A

DC Forward Current

30mA

Peak Forward Current (1/10 duty cycle @ 1kHz)

100mA

LED Junction Temperature

125°C

Reverse Voltage

5 V

Operating Temperature Range

-40°C to +100°C

Storage Temperature Range

-40°C to +100°C

1000V

Class 2

Part Number

Forward Voltage (V

Reverse Current

[I(Vr=5V), μA]

Full Width Half Max

(

λ

Min.

Typ.

Max.

Max.

Typ.

C460XT290-Sxx00-A

2.7

3.2

3.7

2

21

C470XT290-Sxx00-A

2.7

3.2

3.7

2

22

C505XT290-S0100-A

2.7

3.2

3.7

2

30

C527XT290-S0100-A

2.7

3.2

3.7

2

35

Mechanical Specifications

CxxxXT290-Sxx00-A

Description

Dimension

Tolerance

P-N Junction Area (μm)

250 x 250

± 25

Top Area (μm)

200 x 200

± 25

Bottom Area (μm)

300 x 300

± 25

Chip Thickness (μm)

115

± 15

Au Bond Pad Diameter (μm)

105

-5, +15

Au Bond Pad Thickness (μm)

1.2

± 0.5

Back Contact Metal Area (μm)

210 x 210

± 25

1.7

± 0.3

Notes:

Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000

epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die

but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1

3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing

temperature must not exceed 325°C (< 5 seconds). See Cree Xthin Applications Note for more assembly process information.

Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche

energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is

performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.

All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled

and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given

are within the range of average values expected by manufacturer in large quantities and are provided for information only. All

measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an

integrating sphere using Illuminance E.

Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright®

Applications Note for detailed packaging recommendations.

Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the

chip. See Cree XBright Applications Note for more information.

XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.

Specifications are subject to change without notice.

1.

2.

3.

4.

5.

6.

7.