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CD00297243 Datasheet(PDF) 1 Page - STMicroelectronics |
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CD00297243 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. December 2012 Doc ID 18416 Rev 3 1/14 14 STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Automotive switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ 5x6 double island Table 1. Device summary Order code Marking Package Packaging STL40DN3LLH5 40DN3LLH5 PowerFLAT™ 5x6 double island Tape and reel www.st.com |
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