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TAS5717 Datasheet(PDF) 9 Page - Texas Instruments |
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TAS5717 Datasheet(HTML) 9 Page - Texas Instruments |
9 / 68 page TAS5717 TAS5719 www.ti.com SLOS655A – NOVEMBER 2010 – REVISED FEBRUARY 2011 ELECTRICAL CHARACTERISTICS DC Characteristics TA = 25 °, PVCC_X = 13 V, DVDD = AVDD = 3.3 V, RL= 8 Ω, BTL AD Mode, fS = 48 KHz (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOH High-level output voltage FAULTZ and SDA IOH = –4 mA 2.4 V DVDD = 3 V VOL Low-level output voltage FAULTZ and SDA IOL = 4 mA 0.5 V DVDD = 3 V VI < VIL ; DVDD = AVDD 75 IIL Low-level input current μA = 3.6V VI > VIH ; DVDD = 75 IIH High-level input current μA AVDD = 3.6V Normal mode 48 70 3.3 V supply voltage (DVDD, IDD 3.3 V supply current mA Reset (RESET = low, 21 32 AVDD) PDN = high) Normal mode 20 34 IPVDD Half-bridge supply current No load (PVDD_X) mA Reset (RESET = low, 5 13 PDN = high) Drain-to-source resistance, LS TJ = 25°C, includes metallization resistance 200 rDS(on) (1) m Ω Drain-to-source resistance, TJ = 25°C, includes metallization resistance 200 HS I/O Protection Vuvp Undervoltage protection limit PVDD falling 3.5 V Vuvp,hyst Undervoltage protection limit PVDD rising 4.5 V OTE(2) Overtemperature error 150 °C Extra temperature drop OTEHYST (2) 30 °C required to recover from error IOC Overcurrent limit protection 4.5 A IOCT Overcurrent response time 150 ns Internal pulldown resistor at Connected when drivers are tristated to provide bootstrap RPD 3 k Ω the output of each half-bridge capacitor charge. (1) This does not include bond-wire or pin resistance. (2) Specified by design © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Link(s): TAS5717 TAS5719 |
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