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W988D6FB Datasheet(PDF) 1 Page - Winbond |
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W988D6FB Datasheet(HTML) 1 Page - Winbond |
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1 / 66 page  W988D6FB / W988D2FB 256Mb Mobile LPSDR Publication Release Date : August 15, 2013 - 1 - Revision A01-004 1. GENERAL DESCRIPTION The Winbond 256Mb Low Power SDRAM is a low power synchronous memory containing 268,435,456 memory cells fabricated with Winbond high performance process technology. It is designed to consume less power than the ordinary SDRAM with low power features essential for applications which use batteries. It is available in two organizations: 2,097,152 words × 4 banks × 32 bits or 4,194,304 words × 4 banks × 16 bits. The device operates in a fully synchronous mode, and the output data are synchronized to positive edges of the system clock and is capable of delivering data at clock rate up to 166MHz. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR). The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile game consoles and other handheld applications where large memory density and low power consumption are required. The device operates from 1.8V power supply, and supports the 1.8V LVCMOS bus interface. 2. FEATURES Power supply VDD = 1.7V~1.95V VDDQ = 1.7V~1.95V Frequency : 166MHz(-6),133MHz(-75) Programmable Partial Array Self Refresh Power Down Mode Deep Power Down Mode (DPD) Programmable output buffer driver strength Automatic Temperature Compensated Self Refresh CAS Latency: 2 and 3 Burst Length: 1, 2, 4, 8, and full page Refresh: refresh cycle 64ms Interface: LVCMOS Support package : 54 balls VFBGA (x16) 90 balls VFBGA (x32) Operating Temperature Range Extended (-25°C ~ +85°C) Industrial (-40°C ~ +85°C) |
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