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W987D6HB Datasheet(PDF) 9 Page - Winbond |
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W987D6HB Datasheet(HTML) 9 Page - Winbond |
9 / 66 page W987D6HB / W987D2HB 128Mb Mobile LPSDR Publication Release Date : September 25, 2013 - 9 - Revision : A01-004 7. ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings Parameter Symbol Values Units Min Max Voltage on VDD relative to VSS VDD −0.5 2.3 V Voltage on VDDQ relative to VSS VDDQ −0.5 2.3 V Voltage on any pin relative to VSS VIN, VOUT −0.5 2.3 V Storage Temperature TSTG −55 150 °C Short Circuit Output Current IOUT ±50 mA Power Dissipation PD 1.0 W Notes: stresses greater than those listed in “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 7.2 Operating Conditions Parameter Symbol Min. Typ Max. Unit Supply Voltage VDD 1.7 1.8 1.95 V Supply Voltage (for I/O Buffer) VDDQ 1.7 1.8 1.95 V Input High level Voltage VIH 0.8*VDDQ - VDDQ + 0.3 V Input Low level Voltage VIL -0.3 - +0.3 V LVCOMS Output H Level Voltage (IOUT = -0.1 mA ) VOH 0.9*VDDQ - - V LVCMOS Output L Level Voltage (IOUT = +0.1 mA ) VOL - - 0.2 V Input Leakage Current (0V VIN VDD, all other pins not under test = 0V) II(L) -1 - 1 A Output Leakage Current (Output disable , 0V VOUT VDDQ) IO(L) -5 - 5 A Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns 7.3 Capacitance Parameter Symbol Min. Max. Unit Input Capacitance : All other input-only CI 1.5 3.0 pf Input Capacitance (CLK) CCLK 1.5 3.5 pf Input/Output capacitance CIO 3.0 5.0 pf Note: These parameters are periodically sampled and not 100% tested. |
Similar Part No. - W987D6HB_13 |
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Similar Description - W987D6HB_13 |
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