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W971GG6JB Datasheet(PDF) 7 Page - Winbond

Part # W971GG6JB
Description  8M X 8 BANKS X 16 BIT DDR2 SDRAM
Download  87 Pages
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Manufacturer  WINBOND [Winbond]
Direct Link  http://www.winbond.com
Logo WINBOND - Winbond

W971GG6JB Datasheet(HTML) 7 Page - Winbond

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W971GG6JB
Publication Release Date: Sep. 24, 2013
- 7 -
Revision A09
6.
BALL DESCRIPTION
BALL NUMBER
SYMBOL
FUNCTION
DESCRIPTION
M8,M3,M7,N2,N8,N3
,N7,P2,P8,P3,M2,P7
,R2
A0
−A12
Address
Provide the row address for active commands, and the column
address and Auto-precharge bit for Read/Write commands to select
one location out of the memory array in the respective bank.
Row address: A0
−A12.
Column address: A0
−A9. (A10 is used for Auto-precharge)
L2,L3,L1
BA0
−BA2
Bank Select
BA0
−BA2 define to which bank an ACTIVE, READ, WRITE or
PRECHARGE command is being applied.
G8,G2,H7,H3,H1,H9
,F1,F9,C8,C2,D7,D3,
D1,D9,B1,B9
DQ0
−DQ15
Data Input
/ Output
Bi-directional data bus.
K9
ODT
On Die Termination
Control
ODT (registered HIGH) enables termination resistance internal to the
DDR2 SDRAM.
F7,E8
LDQS,
LDQS
LOW Data Strobe
Data Strobe for Lower Byte: Output with read data, input with write
data for source synchronous operation. Edge-aligned with read data,
center-aligned with write data. LDQS corresponds to the data on
DQ0
−DQ7. LDQS is only used when differential data strobe mode
is enabled via the control bit at EMR (1)[A10 EMRS command].
B7,A8
UDQS,
UDQS
UP Data Strobe
Data Strobe for Upper Byte: Output with read data, input with write
data for source synchronous operation. Edge-aligned with read data,
center-aligned with write data. UDQS corresponds to the data on
DQ8
−DQ15. UDQS is only used when differential data strobe mode
is enabled via the control bit at EMR (1)[A10 EMRS command].
L8
CS
Chip Select
All
commands
are
masked
when
CS
is
registered
HIGH
. CS provides for external rank selection on systems with
multiple ranks.
CS is considered part of the command code.
K7,L7,K3
RAS , CAS ,
WE
Command Inputs
RAS , CAS and WE (along with CS ) define the command being
entered.
B3,F3
UDM
LDM
Input Data Mask
DM is an input mask signal for write data. Input data is masked when
DM is sampled high coincident with that input data during a Write
access. DM is sampled on both edges of DQS. Although DM pins are
input only, the DM loading matches the DQ and DQS loading.
J8,K8
CLK,
CLK
Differential Clock
Inputs
CLK and
CLK are differential clock inputs. All address and control
input signals are sampled on the crossing of the positive edge of CLK
and negative edge of
CLK . Output (read) data is referenced to the
crossings of CLK and CLK (both directions of crossing).
K2
CKE
Clock Enable
CKE (registered HIGH) activates and CKE (registered LOW)
deactivates clocking circuitry on the DDR2 SDRAM.
J2
VREF
Reference Voltage
VREF is reference voltage for inputs.
A1,E1,J9,M9,R1
VDD
Power Supply
Power Supply: 1.8V ± 0.1V.
A3,E3,J3,N1,P9
VSS
Ground
Ground.
A9,C1,C3,C7,C9,E9,
G1,G3,G7,G9
VDDQ
DQ Power Supply
DQ Power Supply: 1.8V ± 0.1V.
A7,B2,B8,D2,D8,E7,
F2,F8,H2,H8
VSSQ
DQ Ground
DQ Ground. Isolated on the device for improved noise immunity.
A2,E2,R3,R7,R8
NC
No Connection
No connection.
J7
VSSDL
DLL Ground
DLL Ground.
J1
VDDL
DLL Power Supply
DLL Power Supply: 1.8V ± 0.1V.


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