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2SA2184 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA2184 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SA2184 2009-04-24 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −550 V, IE = 0 ― ― −10 μA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −1 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −550 ― ― V hFE (1) VCE = −5 V, IC = −100 mA 80 ― 300 DC current gain hFE (2) VCE = −5 V, IC = −500 mA 5 ― ― Collector emitter saturation voltage VCE (sat) IC = −300 mA, IB = −60 mA ― ― −0.7 V Base-emitter saturation voltage VBE (sat) IC = −300 mA, IB = −60 mA ― ― −1.2 V Transition frequency fT VCE = −5 V, IC = −50 mA ― 27 ― MHZ Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF Rise time tr ― 0.1 ― Storage time tstg ― 1.6 ― μs Switching time Fall time tf IB1 = 100 mA, IB2 = 200 mA Duty cycle ≤ 1% ― 40 ― ns Marking A2184 Lot No. Note:2 Part No. (or abbreviation code) Input IB1 IB2 Output VCC = −300 V 20 μs IB2 Note 2 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment |
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