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2SA2184 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SA2184
Description  High Voltage Switching Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA2184 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SA2184
2009-04-24
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −550 V, IE = 0
−10
μA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0
−1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−550
V
hFE (1)
VCE = −5 V, IC = −100 mA
80
300
DC current gain
hFE (2)
VCE = −5 V, IC = −500 mA
5
Collector emitter saturation voltage
VCE (sat)
IC = −300 mA, IB = −60 mA
−0.7
V
Base-emitter saturation voltage
VBE (sat)
IC = −300 mA, IB = −60 mA
−1.2
V
Transition frequency
fT
VCE = −5 V, IC = −50 mA
27
MHZ
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
30
pF
Rise time
tr
0.1
Storage time
tstg
1.6
μs
Switching time
Fall time
tf
IB1 = 100 mA, IB2 = 200 mA
Duty cycle ≤ 1%
40
ns
Marking
A2184
Lot No.
Note:2
Part No. (or abbreviation code)
Input
IB1
IB2
Output
VCC = −300 V
20 μs
IB2
Note 2 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment


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