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AM29F200AT-150EE Datasheet(PDF) 1 Page - Advanced Micro Devices |
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AM29F200AT-150EE Datasheet(HTML) 1 Page - Advanced Micro Devices |
1 / 39 page PRELIMINARY Publication# 20637 Rev: B Amendment/+3 Issue Date: March 1998 Am29F200A 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and write operations — Minimizes system level power requirements s High performance — Access times as fast as 55 ns s Low power consumption — 20 mA typical active read current (byte mode) — 28 mA typical active read current for (word mode) — 30 mA typical program/erase current —1 µA typical standby current s Sector erase architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 100,000 write/erase cycles guaranteed s Package options — 44-pin SO — 48-pin TSOP s Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection s Data# Polling and Toggle Bit — Detects program or erase cycle completion s Ready/Busy# output (RY/BY#) — Hardware method for detection of program or erase cycle completion s Erase Suspend/Erase Resume — Supports reading data from a sector not being erased s Hardware RESET# pin — Resets internal state machine to the reading array data |
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