W25Q16DWSSIG datasheet(69/85 Pages) WINBOND

Part #	W25Q16DWSSIG

Description	1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

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Manufacturer	WINBOND [Winbond]

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69 / 85 page

W25Q16DW

Publication Release Date: September 06, 2012

- 69 -

Revision F

8.

ELECTRICAL CHARACTERISTICS

8.1 Absolute Maximum Ratings (1)

PARAMETERS

SYMBOL

CONDITIONS

RANGE

UNIT

Supply Voltage

VCC

–0.6 to VCC+0.6

V

Voltage Applied to Any Pin

VIO

Relative to Ground

–0.6 to VCC+0.6

V

Transient Voltage on any Pin

VIOT

<20nS Transient

Relative to Ground

–1.0V to

VCC+1.0V

V

Storage Temperature

TSTG

–65 to +150

°C

Lead Temperature

TLEAD

See Note (2)

°C

Electrostatic Discharge Voltage

VESD

(3)

Human Body Model (HBM)

Machine Model (MM)

Charge Device model (CDM)

–2000 to +2000

–200 to +200

–750 to +750

V

Notes:

1. This device has been designed and tested for the specified operation ranges. Proper operation outside

of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.

Exposure beyond absolute maximum ratings may cause permanent damage.

2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the

European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.

3. ESD Test Condition:

HBM – JESD22-A114C.01

MM – EIA/JESD22-A115-A

CDM – JESD22-C101-C

8.2 Operating Ranges

PARAMETER

SYMBOL

CONDITIONS

SPEC

UNIT

MIN

MAX

Supply Voltage(1)

VCC

FR = 80MHz,

fR = 50MHz

FR = 104MHz,

fR = 50MHz

1.65

1.7

1.95

V

Ambient Temperature,

Operating

TA

Industrial

–40

+85

°C

Note:

1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of

the programming (erase/write) voltage.

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