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EDJ2116DEBG Datasheet(PDF) 11 Page - Elpida Memory

Part # EDJ2116DEBG
Description  2G bits DDR3 SDRAM
Download  33 Pages
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Manufacturer  ELPIDA [Elpida Memory]
Direct Link  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

EDJ2116DEBG Datasheet(HTML) 11 Page - Elpida Memory

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EDJ2108DEBG, EDJ2116DEBG
Data Sheet E1712E60 (Ver. 6.0)
11
1.4.2
Basic IDD and IDDQ Measurement Conditions
Table 5: Basic IDD and IDDQ Measurement Conditions
Parameter
Symbol
Description
Operating one bank
active precharge
current
IDD0
CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Table 4; BL: 8*
1; AL: 0; /CS: H
between ACT and PRE; Command, address, bank address inputs: partially toggling
according to Table 6; Data I/O: MID-LEVEL; DM: stable at 0;
Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 6);
Output buffer and RTT: enabled in MR*
2; ODT signal: stable at 0; Pattern details: see
Table 6
Operating one bank
active-read-precharge
current
IDD1
CKE: H; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 4; BL: 8*
1, *6; AL:
0; /CS: H between ACT, RD and PRE; Command, address, bank address inputs, data
I/O: partially toggling according to Table 7;
DM: stable at 0; Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...
(see Table 7); Output buffer and RTT: enabled in MR*
2; ODT Signal: stable at 0;
Pattern details: see Table 7
Precharge standby
current
IDD2N
CKE: H; External clock: on; tCK, CL: see Table 4 BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 8;
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer
and RTT: enabled in mode registers*
2; ODT signal: stable at 0; pattern details: see
Table 8
Precharge standby
ODT current
IDD2NT
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 9;
data I/O: MID-LEVEL; DM: stable at 0; bank activity: all banks closed; output buffer
and RTT: enabled in MR*
2; ODT signal: toggling according to Table 9; pattern details:
see Table 9
Precharge standby
ODT IDDQ current
IDDQ2NT
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD
current
Precharge power-down
current slow exit
IDD2P0
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL; DM:
stable at 0; bank activity: all banks closed; output buffer and RTT: EMR*
2; ODT
signal: stable at 0; precharge power down mode: slow exit*
3
Precharge power-down
current fast exit
IDD2P1
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;
DM:stable at 0; bank activity: all banks closed; output buffer and RTT: enabled in
MR*
2; ODT signal: stable at 0; precharge power down mode: fast exit*3
Precharge quiet
standby current
IDD2Q
CKE: H; External clock: On; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: stable at 0; data I/O: MID-LEVEL;
DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in
MR*
2; ODT signal: stable at 0
Active standby current
IDD3N
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address Inputs: partially toggling according to Table 8;
data I/O: MID-LEVEL; DM: stable at 0;
bank activity: all banks open; output buffer and RTT: enabled in MR*
2;
ODT signal: stable at 0; pattern details: see Table 8
Active power-down
current
IDD3P
CKE: L; External clock: on; tCK, CL: see Table 4; BL: 8*
1; AL: 0; /CS: stable at 1;
Command, address, bank address inputs: stable at 0; data I/O: MID-LEVEL;
DM:stable at 0; bank activity: all banks open; output buffer and RTT:
enabled in MR*
2; ODT signal: stable at 0
Operating burst read
current
IDD4R
CKE: H; External clock: on; tCK, CL: see Table 4; BL: 8*
1, *6; AL: 0; /CS: H between
RD; Command, address, bank address Inputs: partially toggling according to
Table 10; data I/O: seamless read
data burst with different data between one burst and the next one according to
Table 10; DM: stable at 0;
bank activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...
(see Table 10); Output buffer and RTT: enabled in MR*
2; ODT signal: stable at 0;
pattern details: see Table 10
Operating burst read
IDDQ current
IDDQ4R
Same definition like for IDD4R, however measuring IDDQ current instead of IDD
current


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