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TISP61511D Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP61511D Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
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2 / 9 page  JULY 1995 — REVISED JULY 2008 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Recommended Operating Conditions TISP61511D Gated Protectors Absolute Maximum Ratings Rating Symbol Value Unit Repetitive peak off-state voltage, VGK =0,-40 °C ≤ TJ ≤ 85 °CVDRM -100 V Repetitive peak gate-cathode voltage, VKA =0,-40 °C ≤ TJ ≤ 85 °CVGKRM -85 V Non-repetitive peak on-state pulse current (see Notes 1 and 2) ITSP A 10/1000 µs 5/310 µs 0.2/310 µs 1/20 µs 2/10 µsTJ =-40 °C TJ =25 °C, 85 °C 30 40 40 90 120 170 Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2) ITSM A full-sine-wave, 20 ms 5 1s 3.5 Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2) IGSM 2A Junction temperatur e TJ -55 to +150 °C Storage temperature range Tstg -55 to +150 °C NOTES: 1. Initially the protector must be in thermal equilibrium with -40 °C ≤ TJ ≤ 85 °C. The surge may be repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85 °C, derate linearly to zero at 150 °C lead temperature. Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) Component Min Typ Max Unit CG Gate decoupling capacitor 220 nF Parameter Test Conditions Min Typ Max Unit ID Off-state current VD =-85 V,V GK =0 TJ =25 °C5 µA TJ =70 °C50 µA V(BO) Breakover voltage IT = 30 A, 10/1000 µs, 1 kV, RS = 33 Ω, di/dt(i) = 8 A/µs (see Note 3) -58 V VGK(BO) Gate-cathode voltage at breakover IT = 30 A, 10/700 µs, 1.5 kV, RS=10 Ω, di/dt(i) = 14 A/µs (see Note 3) IT = 30 A, 1.2/50 µs, 1.5 kV, RS=10 Ω, di/dt (i) = 70 A/µs (see Note 3) IT = 38 A, 2/10 µs, 2.5 kV, RS=61 Ω, di/dt(i) = 40 A/µs (see Note 3) 10 20 25 V VT On-state voltage IT = 0.5 A, tw = 500 µs IT =3A,t w = 500 µs 3 4 V VF Forward voltage IF =5A,t w = 500 µs3 V VFRM Peak forward recovery voltage IF = 30 A, 10/1000 µs, 1 kV, RS =33 Ω, di/dt(i) = 8 A/µs (see Note 3) IT = 30 A, 10/700 µs, 1.5 kV, RS=10 Ω, di/dt (i) = 14 A/µs (see Note 3) IT = 30 A, 1.2/50 µs, 1.5 kV, RS=10 Ω, di/dt (i) = 70 A/µs (see Note 3) IT = 38 A, 2/10 µs, 2.5 kV, RS=61 Ω, di/dt(i) = 40 A/µs (see Note 3) 5 5 7 12 V NOTE 3: All tests have CG = 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and the R or T terminal. See the applications section for the details of the impulse generators. |
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