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TISP4C350H3BJ Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP4C350H3BJ Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 4 page Rating Symbol Value Unit Repetitive peak off-state voltage '4C290H3BJ '4C350H3BJ VDRM ±220 ±275 '4C145H3BJ '4C180H3BJ ±120 '4C165H3BJ ±135 ±145 '4C250H3BJ ±190 '4C125H3BJ '4C220H3BJ ±100 '4C115H3BJ ±90 ±180 V Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape) 10/160 μs (TIA-968-A, 10/160 μs voltage wave shape) 5/310 μs (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/21/45) 10/560 μs (TIA-968-A, 10/560 μs voltage wave shape) 10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape) IPPSM ±500 ±200 ±150 ±100 ±100 A Non-repetitive peak on-state current (see Notes 1, 2 and 3) ITSM 30 2.1 A 20 ms, 50 Hz (full sine wave) 1000 s, 50 Hz Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. SEPTEMBER 2004 – REVISED JANUARY 2010 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit IDRM Repetitive peak off-state current VD = VDRM TA = 25 °C TA = 85 °C ±5 ±10 μA V(BO) Breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω '4C290H3BJ '4C350H3BJ ±290 ±350 '4C145H3BJ '4C180H3BJ ±145 '4C165H3BJ ±165 ±180 '4C250H3BJ ±250 '4C125H3BJ '4C220H3BJ ±125 '4C115H3BJ ±115 ±220 V V(BO) Impulse breakover voltage dv/dt ≤ ±1000 V/μs, Linear voltage ramp, Maximum ramp value = ±500 V di/dt = ±10 A/μs, Linear current ramp, Maximum ramp value = ±10 A '4C290H3BJ '4C350H3BJ ±300 ±360 '4C145H3BJ '4C180H3BJ '4C290H3BJ '4C350H3BJ '4C220H3BJ '4C250H3BJ ±155 '4C165H3BJ ±175 ±190 '4C250H3BJ ±260 '4C125H3BJ '4C220H3BJ ±135 '4C115H3BJ ±125 ±230 V I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω±600 mA VT On-state voltage IT = ±5A,t w = 100 μs ±3V IH Holding current IT = ±5 A, di/dt = ±30 mA/ms ±150 ±600 mA CO Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -2 V 40 '4C125H3BJ '4C115H3BJ 50 '4C145H3BJ '4C165H3BJ '4C180H3BJ 45 pF |
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