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APT10026L2LLG Datasheet(PDF) 3 Page - Microsemi Corporation

Part # APT10026L2LLG
Description  Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT10026L2LLG Datasheet(HTML) 3 Page - Microsemi Corporation

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APT10026L2LL
Typical Performance Curves
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
7.5V
5V
5.5V
6.5V
6V
7V
15 &10V
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
NORMALIZED TO
V
GS
= 10V @ I
D
= 19A
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
I
D
= 19A
V
GS
= 10V
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
120
100
80
60
40
20
0
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0509
0.0894
0.0522F
0.988F
Power
(watts)
RC MODEL
Junction
temp. (
°C)
Case temperature. (
°C)


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